Discrete Semiconductor Products

PHD34NQ10T,118

Obsolete

MOSFET N-CH 100V 35A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 35A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD34NQ10T,118

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	40 nC
Input Capacitance (Ciss) (Max)	1704 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Power Dissipation (Max)	136 W
Rds On (Max)	0.04 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Mounting Type	Package Name	FET Type
NXP USA Inc. PHD34NQ10T,118	136 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	-55 °C	175 °C	4 V	1704 pF	MOSFET (Metal Oxide)	100 V	20 V	40 nC	35 A	0.04 Ohm	Surface Mount	DPak	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 35A (Tc) 136W (Tc) Surface Mount DPAK

Technical documentation and resources