Discrete Semiconductor Products

PHD34NQ10T,118

Obsolete

MOSFET N-CH 100V 35A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 35A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHD34NQ10T,118

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1704 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
Freescale Semiconductor - NXP PHD34NQ10T,118	DPAK (2 Leads + Tab) SC-63 TO-252-3	40 mOhm	DPAK	10 V	Surface Mount	N-Channel	MOSFET (Metal Oxide)	40 nC	100 V	35 A	-55 °C	175 ░C	20 V	1704 pF	136 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 35A (Tc) 136W (Tc) Surface Mount DPAK

Technical documentation and resources