Discrete Semiconductor Products

SIR692DP-T1-RE3

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MOSFET N-CH 250V 24.2A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 250V 24.2A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR692DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	24.2 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1405 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	63 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIR692DP-T1-RE3	4 V	63 mOhm	10 V	7.5 V	PowerPAK® SO-8	N-Channel	24.2 A	20 V	104 W	PowerPAK® SO-8	-55 °C	150 °C	1405 pF	Surface Mount	30 nC	MOSFET (Metal Oxide)	250 V

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General part information

N-Channel 250 V 24.2A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources