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SOT1235
Discrete Semiconductor Products

PSMN1R2-55SLHAX

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Nexperia USA Inc.

N-CHANNEL 55 V, 1.03 MOHM, 330 A LOGIC LEVEL APPLICATION SPECIFIC MOSFET IN LFPAK88

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SOT1235
Discrete Semiconductor Products

PSMN1R2-55SLHAX

Active
Nexperia USA Inc.

N-CHANNEL 55 V, 1.03 MOHM, 330 A LOGIC LEVEL APPLICATION SPECIFIC MOSFET IN LFPAK88

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN1R2-55SLHAX
Current - Continuous Drain (Id) @ 25°C330 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]395 nC
Input Capacitance (Ciss) (Max) @ Vds25773 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-1235
Power Dissipation (Max)375 W
Rds On (Max) @ Id, Vgs1.03 mOhm
Supplier Device PackageLFPAK88 (SOT1235)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.97
Digi-Reel® 1$ 3.97
N/A 0$ 5.05
Tape & Reel (TR) 2000$ 1.87

Description

General part information

PSMN1R2-55SLH Series

330 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique "SchottkyPlus" technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe and reliable switching at high load-current.