Discrete Semiconductor Products

DSE010-TR-E

Obsolete

DIODE GEN PURP 80V 100MA

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 80V 100MA

Technical Specifications

Parameters and characteristics for this part

Specification	DSE010-TR-E

Capacitance @ Vr, F	3 pF
Current - Average Rectified (Io)	100 mA
Current - Reverse Leakage @ Vr	500 nA
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Speed	Speed	Technology
ON Semiconductor DSE010-TR-E	-55 °C	125 °C	500 nA	4 ns	100 mA	80 V	3 pF	Any Speed	200 mA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 80 V 100mA

Technical documentation and resources

No documents available