Discrete Semiconductor Products

SI7923DN-T1-E3

Obsolete

MOSFET 2P-CH 30V 4.3A PPAK 1212

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 30V 4.3A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SI7923DN-T1-E3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	21 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Rds On (Max) @ Id, Vgs	47 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs	Configuration	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Technology	Package / Case	Drain to Source Voltage (Vdss)	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI7923DN-T1-E3	21 nC	2 P-Channel	47 mOhm	PowerPAK® 1212-8 Dual	Surface Mount	MOSFET (Metal Oxide)	PowerPAK® 1212-8 Dual	30 V	Logic Level Gate	-55 °C	150 °C	3 V	4.3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 4.3A 1.3W Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources