Discrete Semiconductor Products

DTC114T

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ON Semiconductor

TRANS PREBIAS NPN 50V 100MA

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Discrete Semiconductor Products

DTC114T

Active

ON Semiconductor

TRANS PREBIAS NPN 50V 100MA

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DTC114T

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DTC114EM3 Series

NPN Bipolar Digital Transistor (BRT)

Part	Resistors Included	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	Grade	Qualification
ON Semiconductor DTC114EET1G	R1 and R2	NPN - Pre-Biased	50 V	Surface Mount	100 mA	SC-75 SOT-416	10 kOhms	35	SC-75 SOT-416	250 mV	200 mW	500 nA	10 kOhms
ON Semiconductor SDTC114EET1G	R1 and R2	NPN - Pre-Biased	50 V	Surface Mount	100 mA	SC-75 SOT-416	10 kOhms	35	SC-75 SOT-416	250 mV	200 mW	500 nA	10 kOhms	Automotive	AEC-Q101
ON Semiconductor DTC114EXV3T1
ON Semiconductor DTC114EM3T5G		NPN - Pre-Biased	50 V	Surface Mount	100 mA	SOT-723	10 kOhms	35	SOT-723	250 mV	260 mW	500 nA	10 kOhms
ON Semiconductor DTC114YM3T5G		NPN - Pre-Biased	50 V	Surface Mount	100 mA	SOT-723	10 kOhms	80	SOT-723	250 mV	260 mW	500 nA	47000 Ohms
ON Semiconductor DTC114YET1G		NPN - Pre-Biased	50 V	Surface Mount	100 mA	SC-75 SOT-416	10 kOhms	80	SC-75 SOT-416	250 mV	200 mW	500 nA	47000 Ohms
ON Semiconductor DTC114TXV3T1
ON Semiconductor DTC114TM3T5G		NPN - Pre-Biased	50 V	Surface Mount	100 mA	SOT-723	10 kOhms	160 hFE	SOT-723	250 mV	260 mW	500 nA
ON Semiconductor DTC114T
ON Semiconductor DTC114EET1

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	11539	$ 0.03

Description

General part information

DTC114EM3 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Documents

Technical documentation and resources

No documents available