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NGD15N41ACLT4G
Discrete Semiconductor Products

NGD15N41ACLT4G

Obsolete
LITTELFUSE

IGNITION IGBT 15 A, 410 V

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NGD15N41ACLT4G
Discrete Semiconductor Products

NGD15N41ACLT4G

Obsolete
LITTELFUSE

IGNITION IGBT 15 A, 410 V

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationNGD15N41ACLT4G
Current - Collector (Ic) (Max) [Max]15 A
Current - Collector Pulsed (Icm)50 A
Input TypeLogic
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]107 W
Supplier Device PackageTO-252 (DPAK)
Td (on/off) @ 25°C4 µs
Td (on/off) @ 25°C-
Test Condition6.5 A, 1 kOhm, 300 V
Vce(on) (Max) @ Vge, Ic [Max]2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]440 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.501m+

Description

General part information

NGD15N41ACLT4G Series

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive

Documents

Technical documentation and resources