Integrated Circuits (ICs)

BQ4011MA-200

Obsolete

Texas Instruments

IC NVSRAM 256KBIT PARALLEL 28DIP

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Integrated Circuits (ICs)

BQ4011MA-200

Obsolete

Texas Instruments

IC NVSRAM 256KBIT PARALLEL 28DIP

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BQ4011MA-200

Access Time	200 ns
Memory Format	NVSRAM
Memory Interface	Parallel
Memory Organization	32K x 8
Memory Size	32 KB
Memory Type	Non-Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	28-DIP Module
Package / Case	0.61 in
Package / Case	15.49 mm
Supplier Device Package	28-DIP Module
Supplier Device Package [x]	18.42
Supplier Device Package [y]	37.72
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4.75 V
Write Cycle Time - Word, Page	200 ns

BQ4011 Series

Part	Write Cycle Time - Word, Page	Memory Organization	Package / Case	Package / Case	Package / Case	Memory Interface	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Type	Mounting Type	Technology	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Memory Format	Memory Size	Access Time	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
Texas Instruments BQ4011YMA-200	200 ns	32K x 8	28-DIP Module	0.61 in	15.49 mm	Parallel	4.5 V	5.5 V	Non-Volatile	Through Hole	NVSRAM (Non-Volatile SRAM)	37.72	18.42	28-DIP Module	70 °C	0 °C	NVSRAM	32 KB	200 ns
Texas Instruments BQ4011LYMA-70N		32K x 8	28-DIP Module	0.61 in	15.49 mm	Parallel	3 V	3.6 V	Non-Volatile	Through Hole	NVSRAM (Non-Volatile SRAM)	37.72	18.42	28-DIP Module	85 °C	-40 °C	NVSRAM	32 KB	70 ns
Texas Instruments BQ4011YMA-150N	150 ns	32K x 8	28-DIP Module	0.61 in	15.49 mm	Parallel	4.5 V	5.5 V	Non-Volatile	Through Hole	NVSRAM (Non-Volatile SRAM)	37.72	18.42	28-DIP Module	85 °C	-40 °C	NVSRAM	32 KB	150 ns
Texas Instruments BQ4011YMA-70N		32K x 8	28-DIP Module	0.61 in	15.49 mm	Parallel	4.5 V	5.5 V	Non-Volatile	Through Hole	NVSRAM (Non-Volatile SRAM)	37.72	18.42	28-DIP Module	85 °C	-40 °C	NVSRAM	32 KB	70 ns
Texas Instruments BQ4011YMA-150	150 ns	32K x 8	28-DIP Module	0.61 in	15.49 mm	Parallel	4.5 V	5.5 V	Non-Volatile	Through Hole	NVSRAM (Non-Volatile SRAM)	37.72	18.42	28-DIP Module	70 °C	0 °C	NVSRAM	32 KB	150 ns
Texas Instruments BQ4011YMA-100		32K x 8	28-DIP Module	0.61 in	15.49 mm	Parallel	4.5 V	5.5 V	Non-Volatile	Through Hole	NVSRAM (Non-Volatile SRAM)	37.72	18.42	28-DIP Module	70 °C	0 °C	NVSRAM	32 KB	100 ns	100 ns	100 ns
Texas Instruments BQ4011MA-100		32K x 8	28-DIP Module	0.61 in	15.49 mm	Parallel	4.75 V	5.5 V	Non-Volatile	Through Hole	NVSRAM (Non-Volatile SRAM)	37.72	18.42	28-DIP Module	70 °C	0 °C	NVSRAM	32 KB	100 ns	100 ns	100 ns
Texas Instruments BQ4011MA-200	200 ns	32K x 8	28-DIP Module	0.61 in	15.49 mm	Parallel	4.75 V	5.5 V	Non-Volatile	Through Hole	NVSRAM (Non-Volatile SRAM)	37.72	18.42	28-DIP Module	70 °C	0 °C	NVSRAM	32 KB	200 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BQ4011 Series

NVSRAM (Non-Volatile SRAM) Memory IC 256Kbit Parallel 200 ns 28-DIP Module (18.42x37.72)

Documents

Technical documentation and resources