RJK2075DPA-00#J5A

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MOSFET N-CHANNEL 200V 20A WPAK

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Discrete Semiconductor Products

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MOSFET N-CHANNEL 200V 20A WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK2075DPA-00#J5A

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	2200 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs [Max]	69 mOhm
Supplier Device Package	WPAK(3F) (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)
Renesas Electronics Corporation RJK2075DPA-00#J5A	8-PowerVDFN	10 V	150 °C	WPAK(3F) (5x6)	MOSFET (Metal Oxide)	38 nC	Surface Mount	69 mOhm	N-Channel	30 V	200 V	2200 pF	20 A	65 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.91
	Digi-Reel®	1	$ 3.91
	Tape & Reel (TR)	3000	$ 1.30

General part information

N-Channel 200 V 20A (Ta) 65W (Ta) Surface Mount WPAK(3F) (5x6)

Technical documentation and resources