Discrete Semiconductor Products

ES3A-E3/57T

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DIODE GEN PURP 50V 3A DO214AB

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Discrete Semiconductor Products

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DIODE GEN PURP 50V 3A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	ES3A-E3/57T

Capacitance @ Vr, F	45 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	900 mV

Part	Speed	Package / Case	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Grade	Supplier Device Package	Technology	Capacitance @ Vr, F	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division ES3AHE3_A/I	200 mA 500 ns	DO-214AB SMC	AEC-Q101	50 V	Surface Mount	900 mV	Automotive	DO-214AB (SMC)	Standard	45 pF	3 A	30 ns	150 °C	-55 °C	10 µA
Vishay General Semiconductor - Diodes Division ES3A-E3/57T	200 mA 500 ns	DO-214AB SMC		50 V	Surface Mount	900 mV		DO-214AB (SMC)	Standard	45 pF	3 A	30 ns	150 °C	-55 °C	10 µA

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General part information

Diode 50 V 3A Surface Mount DO-214AB (SMC)

Technical documentation and resources