Discrete Semiconductor Products

SUV85N10-10-E3

Obsolete

MOSFET N-CH 100V 85A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 85A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUV85N10-10-E3

Current - Continuous Drain (Id) (Tc)	85 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	160 nC
Input Capacitance (Ciss) (Max)	6550 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	250 W, 3.75 W
Rds On (Max)	10.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Package / Case	Vgs(th) (Max)	Gate Charge (Max)	Vgs (Max)	FET Type	Rds On (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SUV85N10-10-E3	6550 pF	10 V	4.5 V	TO-220AB	TO-220-3	3 V	160 nC	20 V	N-Channel	10.5 mOhm	MOSFET (Metal Oxide)	-55 °C	175 °C	100 V	Through Hole	3.75 W 250 W	85 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 3.58	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole TO-220AB

Technical documentation and resources