Discrete Semiconductor Products

SUV85N10-10-E3

Obsolete

MOSFET N-CH 100V 85A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 85A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUV85N10-10-E3

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	250 W, 3.75 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case
Vishay General Semiconductor - Diodes Division SUV85N10-10-E3	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	160 nC	10.5 mOhm	20 V	4.5 V 10 V	Through Hole	85 A	100 V	TO-220AB	3.75 W 250 W	3 V	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 85A (Tc) 3.75W (Ta), 250W (Tc) Through Hole TO-220AB

Technical documentation and resources