Discrete Semiconductor Products

BYG21M R3G

Unknown

DIODE AVALANCHE 1KV 1.5A DO214AC

Search across all available documentation for this part.

Discrete Semiconductor Products

Unknown

DIODE AVALANCHE 1KV 1.5A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	BYG21M R3G

Capacitance @ Vr, F	13 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	120 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-214AC (SMA)
Technology	Avalanche
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.6 V

Part	Technology	Reverse Recovery Time (trr)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Supplier Device Package	Capacitance @ Vr, F
Taiwan Semiconductor Corporation BYG21MH	Avalanche	120 ns	DO-214AC SMA	1000 V	1.6 V	200 mA 500 ns	1 µA	Surface Mount	-55 °C	150 °C	1.5 A	DO-214AC (SMA)	13 pF
Taiwan Semiconductor Corporation BYG21MHR3G	Avalanche	120 ns	DO-214AC SMA	1000 V	1.6 V	200 mA 500 ns	1 µA	Surface Mount	-55 °C	150 °C	1.5 A	DO-214AC (SMA)	13 pF
Taiwan Semiconductor Corporation BYG21M R3G	Avalanche	120 ns	DO-214AC SMA	1000 V	1.6 V	200 mA 500 ns	1 µA	Surface Mount	-55 °C	150 °C	1.5 A	DO-214AC (SMA)	13 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 1.5A Surface Mount DO-214AC (SMA)

Technical documentation and resources

No documents available