Discrete Semiconductor Products

SIHG065N60E-GE3

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MOSFET N-CH 600V 40A TO247AC

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Discrete Semiconductor Products

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MOSFET N-CH 600V 40A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG065N60E-GE3

Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	74 nC
Input Capacitance (Ciss) (Max) @ Vds	2700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max) [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIHG065N60E-GE3	-55 °C	150 °C	TO-247AC	600 V	TO-247-3	250 W	MOSFET (Metal Oxide)	2700 pF	65 mOhm	5 V	N-Channel	Through Hole	74 nC	30 V	10 V

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General part information

N-Channel 600 V 40A (Tc) 250W (Tc) Through Hole TO-247AC

Technical documentation and resources