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Discrete Semiconductor Products

R6024VNX3C16

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Rohm Semiconductor

600V 24A TO-220AB, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

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Search across all available documentation for this part.

DocumentsMoisture Sensitivity Level - Transistors PCB Layout Thermal Design Guide +45

Product dimension image

Discrete Semiconductor Products

R6024VNX3C16

Active

Rohm Semiconductor

600V 24A TO-220AB, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

Deep-Dive with AI

DocumentsMoisture Sensitivity Level - Transistors PCB Layout Thermal Design Guide +45

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6024VNX3C16

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	15 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	245 W
Rds On (Max) @ Id, Vgs	153 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1055	$ 5.37
Newark	Each	1	$ 6.62
		10	$ 5.60
		25	$ 4.56
		50	$ 3.53
		100	$ 3.22
		250	$ 2.96
		500	$ 2.69

Description

General part information

R6024VNX3 Series

R6024VNX3 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.

Documents

Technical documentation and resources

Moisture Sensitivity Level - Transistors

Package Information

PCB Layout Thermal Design Guide

R6024VNX3 Data Sheet

Compliance of the RoHS directive

Environmental Data

Precautions When Measuring the Rear of the Package with a Thermocouple

Notes for Temperature Measurement Using Forward Voltage of PN Junction

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

TO-220AB Inner Structure

Package Information

Anti-Whisker formation - Transistors

Package Information

TO-220AB Reliability Test Result

Manufacturing Data

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

How to Use LTspice® Models

Schematic Design & Verification

Reduction in Switching Loss of Phase-Shift Full-Bridge Converter using PrestoMOS™ R60xxVNx series

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

R6024VNX3 ESD Data

Characteristics Data

Notes for Temperature Measurement Using Thermocouples

Judgment Criteria of Thermal Evaluation

Types and Features of Transistors

Application Note

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

What Is Thermal Design

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

θ<sub>JC</sub> and Ψ<sub>JT</sub>

Method for Monitoring Switching Waveform

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Measurement Method and Usage of Thermal Resistance RthJC

What is a Thermal Model? (Transistor)

List of Transistor Package Thermal Resistance

TO-220AB Packing Information

Package Information

TO-220AB Explanation for Marking

Package Information

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Notes for Calculating Power Consumption:Static Operation

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Part Explanation

Application Note

Report of SVHC under REACH Regulation

Environmental Data

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

TO-220AB Dimension

Package Information

About Export Regulations

Export Information

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Condition of Soldering / Land Pattern Reference

Package Information

Basics of Thermal Resistance and Heat Dissipation

Benefits given by PrestoMOS™ series for the Phase-Shift Full-Bridge

Technical Article

Technical Data Sheet EN

R6024VNX3 Series

600V 24A TO-220AB, PrestoMOS™ with integrated high-speed diode

Part	Operating Temperature	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Rohm Semiconductor R6024VNX3C16	150 °C	TO-220-3	1800 pF	600 V	38 nC	24 A	TO-220AB	N-Channel	Through Hole	30 V	6.5 V	MOSFET (Metal Oxide)	10 V 15 V	153 mOhm	245 W