Discrete Semiconductor Products

SI2101A-TP

Active

P-CHANNEL MOSFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

P-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	SI2101A-TP

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [custom]	4.5 V
Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	3.9 nC
Input Capacitance (Ciss) (Max) @ Vds	290 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	450 mW
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [custom]	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Micro Commercial Components SI2101A-TP	SC-70 SOT-323	10 V	2 A	20 V	Surface Mount	1 V	P-Channel	450 mW	-55 °C	150 °C	290 pF	4.5 V	3.9 nC	SOT-323	MOSFET (Metal Oxide)	130 mOhm	1.8 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 2A 450mW Surface Mount SOT-323

Technical documentation and resources