Specification	SSM6N15AFU,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds [Max]	13.5 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Power - Max [Max]	300 mW
Rds On (Max) @ Id, Vgs	3.6 Ohm
Supplier Device Package	US6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

SSM6N15AFU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-363(US6)

Part	Operating Temperature	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Mounting Type	Vgs(th) (Max) @ Id	Power - Max [Max]	FET Feature	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
Toshiba Semiconductor and Storage SSM6N15AFU,LF	150 °C	US6	30 V	3.6 Ohm	6-TSSOP SC-88 SOT-363	MOSFET (Metal Oxide)	Surface Mount	1.5 V	300 mW	Logic Level Gate	2 N-Channel (Dual)	13.5 pF	100 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	23419	$ 0.28

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-363(US6)

Technical documentation and resources