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SOT23
Discrete Semiconductor Products

BAS101S-QR

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Nexperia USA Inc.

HIGH-VOLTAGE SWITCHING DUAL DIODE

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SOT23
Discrete Semiconductor Products

BAS101S-QR

Active
Nexperia USA Inc.

HIGH-VOLTAGE SWITCHING DUAL DIODE

Technical Specifications

Parameters and characteristics for this part

SpecificationBAS101S-QR
Current - Average Rectified (Io) (per Diode)100 mA
Current - Reverse Leakage @ Vr150 nA
Diode Configuration1 Pair Series Connection
Mounting TypeSurface Mount
Operating Temperature - Junction150 ¯C
Package / CaseSOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)50 ns
Speed200 mA
SpeedAny Speed
Supplier Device PackageTO-236AB
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.36
10$ 0.22
100$ 0.14
500$ 0.10
1000$ 0.09
Digi-Reel® 1$ 0.36
10$ 0.22
100$ 0.14
500$ 0.10
1000$ 0.09
N/A 1534$ 0.46
Tape & Reel (TR) 3000$ 0.08
6000$ 0.07
9000$ 0.07
15000$ 0.06
21000$ 0.06
30000$ 0.06
75000$ 0.05
150000$ 0.05

Description

General part information

BAS101S-Q Series

High-voltage switching dual diode, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.