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TO-220-2
Discrete Semiconductor Products

IDP12E120XKSA1

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INFINEON

THE IDP12E120 IS A 1200 V SILICON POWER DIODE IN TO-220 REAL 2-LEG PACKAGE

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TO-220-2
Discrete Semiconductor Products

IDP12E120XKSA1

Active
INFINEON

THE IDP12E120 IS A 1200 V SILICON POWER DIODE IN TO-220 REAL 2-LEG PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIDP12E120XKSA1
Current - Average Rectified (Io)28 A
Current - Reverse Leakage @ Vr100 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-220-2
Reverse Recovery Time (trr)150 ns
Speed500 ns, 200 mA
Supplier Device PackagePG-TO220-2-2
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If2.15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 457$ 2.25
Tube 1$ 2.05
50$ 1.65
100$ 1.35
500$ 1.15
1000$ 0.97
2000$ 0.92
5000$ 0.89
10000$ 0.86
NewarkEach 1$ 2.38
10$ 1.88
100$ 1.30
500$ 1.00
1000$ 0.86
2500$ 0.84
5000$ 0.82

Description

General part information

IDP12E120 Series

The 1200 V, 12 A emitter controlledsilicon power diodein a TO-220 real 2-leg package displays excellent softness and VF behaviour and is qualified with a Tj(max)of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.

Documents

Technical documentation and resources