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DO-41
Discrete Semiconductor Products

A1N4007G-G

Active
Comchip Technology

DIODE GEN PURP 1KV 1A DO41

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DO-41
Discrete Semiconductor Products

A1N4007G-G

Active
Comchip Technology

DIODE GEN PURP 1KV 1A DO41

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationA1N4007G-G
Capacitance10 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage5 µA
GradeAutomotive
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)125 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseAxial, DO-204AL, DO-41
Package NameDO-41
QualificationAEC-Q101
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1 kV
Voltage - Forward (Vf) (Max)1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 0.341m+
10$ 0.24
100$ 0.12
500$ 0.10
1000$ 0.07
2000$ 0.06
N/A 450$ 0.131m+
Tape & Box (TB) 5000$ 0.051m+
10000$ 0.04
25000$ 0.04
50000$ 0.04
125000$ 0.03

CAD

3D models and CAD resources for this part

Description

General part information

A1N4007 Series

Diode 1000 V 1A Through Hole DO-41

Documents

Technical documentation and resources

No documents available