Discrete Semiconductor Products

S85MR

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DIODE GEN PURP REV 1KV 85A DO5

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Discrete Semiconductor Products

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DIODE GEN PURP REV 1KV 85A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	S85MR

Current - Average Rectified (Io)	85 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	180 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-5, DO-203AB
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-5
Technology	Reverse Polarity, Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Speed [Min]	Current - Average Rectified (Io)	Supplier Device Package	Package / Case	Technology	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
GeneSiC Semiconductor S85MR	200 mA 500 ns	85 A	DO-5	DO-203AB DO-5 Stud	Reverse Polarity Standard	1.1 V	1000 V	10 µA	Chassis Stud Mount	-65 C	180 °C

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General part information

Diode 1000 V 85A Chassis, Stud Mount DO-5

Technical documentation and resources