Discrete Semiconductor Products

SICAC1060P-TP

Obsolete

DIODE SIL CARB 650V 10A DFN5060

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 650V 10A DFN5060

Technical Specifications

Parameters and characteristics for this part

Specification	SICAC1060P-TP

Capacitance @ Vr, F	452 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	44 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	8-PowerTDFN
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DFN5060
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Capacitance @ Vr, F	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Speed
MCC (Micro Commercial Components) SICAC1060P-TP	44 µA	0 ns	SiC (Silicon Carbide) Schottky	8-PowerTDFN	1.6 V	DFN5060	452 pF	10 A	650 V	175 ░C	-55 °C	Surface Mount	500 mA
MCC (Micro Commercial Components) SICAC1060P-TP	44 µA	0 ns	SiC (Silicon Carbide) Schottky	8-PowerTDFN	1.6 V	DFN5060	452 pF	10 A	650 V	175 ░C	-55 °C	Surface Mount	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 10A Surface Mount DFN5060

Technical documentation and resources