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SOT1216
Discrete Semiconductor Products

PMCXB1000UEZ

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Nexperia USA Inc.

TRANSISTOR MOSFET ARRAY N/P-CH 30V 590MA/410MA 8-PIN DFN1010B-6 T/R

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SOT1216
Discrete Semiconductor Products

PMCXB1000UEZ

Active
Nexperia USA Inc.

TRANSISTOR MOSFET ARRAY N/P-CH 30V 590MA/410MA 8-PIN DFN1010B-6 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationPMCXB1000UEZ
ConfigurationN and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C590 mA, 410 mA
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs1.05 nC, 1.2 nC
Input Capacitance (Ciss) (Max) @ Vds30.3 pF, 43.2 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-XFDFN Exposed Pad
Power - Max [Max]285 mW
Rds On (Max) @ Id, Vgs1.4 Ohm, 670 mOhm
Supplier Device PackageDFN1010B-6
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.45
10$ 0.35
100$ 0.21
500$ 0.19
1000$ 0.13
2000$ 0.12
Digi-Reel® 1$ 0.45
10$ 0.35
100$ 0.21
500$ 0.19
1000$ 0.13
2000$ 0.12
N/A 1682$ 0.76
242520$ 0.28
Tape & Reel (TR) 5000$ 0.12

Description

General part information

PMCXB1000UE Series

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.