Discrete Semiconductor Products

PMCXB1000UEZ

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MOSFET N/P-CH 30V 0.59A 6DFN

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Discrete Semiconductor Products

Active

MOSFET N/P-CH 30V 0.59A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PMCXB1000UEZ

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	410 mA, 590 mA
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	1.05 nC
Gate Charge (Qg) (Max) @ Vgs	1.2 nC
Input Capacitance (Ciss) (Max) @ Vds	43.2 pF, 30.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	285 mW
Rds On (Max) @ Id, Vgs	1.4 Ohm, 670 mOhm
Supplier Device Package	DFN1010B-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	950 mV

Part	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package
Freescale Semiconductor - NXP PMCXB1000UEZ	285 mW	1.4 Ohm 670 mOhm	N and P-Channel Complementary	30.3 pF 43.2 pF	1.05 nC	1.2 nC	-55 °C	150 °C	30 V	410 mA 590 mA	Surface Mount	MOSFET (Metal Oxide)	6-XFDFN Exposed Pad	950 mV	DFN1010B-6

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General part information

Mosfet Array 30V 590mA (Ta), 410mA (Ta) 285mW (Ta) Surface Mount DFN1010B-6

Technical documentation and resources