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8-Power VDFN
Discrete Semiconductor Products

PXP1500-100QSJ

Active
Nexperia USA Inc.

MOSFETS 12 V, P-CHANNEL TRENCH MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheetPower MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)+2
8-Power VDFN
Discrete Semiconductor Products

PXP1500-100QSJ

Active
Nexperia USA Inc.

MOSFETS 12 V, P-CHANNEL TRENCH MOSFET

Deep-Dive with AI

DocumentsDatasheetPower MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)+2

Technical Specifications

Parameters and characteristics for this part

SpecificationPXP1500-100QSJ
Current - Continuous Drain (Id) @ 25°C700 mA, 1.4 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]4.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]159 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)1.7 W, 16.2 W
Rds On (Max) @ Id, Vgs1.5 Ohm
Supplier Device PackageMLPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.52
10$ 0.44
100$ 0.31
500$ 0.24
1000$ 0.19
Digi-Reel® 1$ 0.52
10$ 0.44
100$ 0.31
500$ 0.24
1000$ 0.19
N/A 2543$ 1.02
Tape & Reel (TR) 3000$ 0.15
MouserN/A 1$ 0.50
10$ 0.44
100$ 0.28
500$ 0.22
1000$ 0.19
3000$ 0.18
9000$ 0.15
24000$ 0.15

Description

General part information

PXP1500-100QS Series

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.