Discrete Semiconductor Products

FDI2532

Obsolete

MOSFET N-CH 150V 8A/79A I2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 150V 8A/79A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	FDI2532

Current - Continuous Drain (Id) @ 25°C	79 A, 8 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	107 nC
Input Capacitance (Ciss) (Max) @ Vds	5870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-262 (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
ON Semiconductor FDI2532	MOSFET (Metal Oxide)	N-Channel	I2PAK TO-262-3 Long Leads TO-262AA	107 nC	310 W	5870 pF	TO-262 (I2PAK)	150 V	-55 °C	175 ░C	8 A 79 A	16 mOhm	Through Hole	20 V	6 V 10 V	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 8A (Ta), 79A (Tc) 310W (Tc) Through Hole TO-262 (I2PAK)

Technical documentation and resources