Discrete Semiconductor Products

SIDC11D60SIC3

Unknown

DIODE SIL CARB 600V 4A WAFER

Search across all available documentation for this part.

Discrete Semiconductor Products

Unknown

DIODE SIL CARB 600V 4A WAFER

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC11D60SIC3

Capacitance @ Vr, F	150 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Die
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	Sawn on foil
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.9 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Technology	Reverse Recovery Time (trr)	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Speed	Current - Average Rectified (Io)	Capacitance @ Vr, F
INFINEON SIDC11D60SIC3	600 V	Die	175 ░C	-55 °C	Surface Mount	SiC (Silicon Carbide) Schottky	0 ns	Sawn on foil	200 µA	1.9 V	500 mA	4 A	150 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 4A Surface Mount Sawn on foil

Technical documentation and resources