Discrete Semiconductor Products

PHU78NQ03LT,127

Obsolete

MOSFET N-CH 25V 75A IPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 25V 75A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHU78NQ03LT,127

Current - Continuous Drain (Id) (Tc)	75 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	970 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	IPAK
Power Dissipation (Max)	107 W
Rds On (Max)	9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

Part	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	FET Type	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Technology	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Package Name	Current - Continuous Drain (Id) (Tc)	Rds On (Max)
NXP USA Inc. PHU78NQ03LT,127	-55 °C	175 °C	IPAK TO-251-3 Short Leads TO-251AA	10 V	5 V	11 nC	N-Channel	970 pF	107 W	MOSFET (Metal Oxide)	2 V	25 V	20 V	Through Hole	IPAK	75 A	9 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 25 V 75A (Tc) 107W (Tc) Through Hole IPAK

Technical documentation and resources