Discrete Semiconductor Products

HAT2160H-EL-E

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MOSFET N-CH 20V 60A LFPAK

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Discrete Semiconductor Products

Active

MOSFET N-CH 20V 60A LFPAK

Technical Specifications

Parameters and characteristics for this part

Specification	HAT2160H-EL-E

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	7750 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Rds On (Max) @ Id, Vgs	2.6 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Mounting Type	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Renesas Electronics Corporation HAT2160H-EL-E	N-Channel	60 A	2.3 V	MOSFET (Metal Oxide)	Surface Mount	SC-100 SOT-669	20 V	54 nC	20 V	150 °C	4.5 V 10 V	LFPAK	2.6 mOhm	7750 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 60A (Ta) 30W (Tc) Surface Mount LFPAK

Technical documentation and resources