Discrete Semiconductor Products

SMBTA56E6327HTSA1

LTB

TRANSISTOR, PNP, -80V, SOT-23

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

TRANSISTOR, PNP, -80V, SOT-23

Technical Specifications

Parameters and characteristics for this part

Specification	SMBTA56E6327HTSA1

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Supplier Device Package	PG-SOT23
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Supplier Device Package	Transistor Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition
INFINEON SMBTA56E6327HTSA1	PG-SOT23	PNP	150 °C	100	100 nA	Surface Mount	80 V	500 mA	SC-59 SOT-23-3 TO-236-3	330 mW	250 mV	100 MHz
INFINEON SMBTA56E6433HTMA1	PG-SOT23	PNP	150 °C	100	100 nA	Surface Mount	80 V	500 mA	SC-59 SOT-23-3 TO-236-3	330 mW	250 mV	100 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 80 V 500 mA 100MHz 330 mW Surface Mount PG-SOT23

Technical documentation and resources