Discrete Semiconductor Products

S16JR

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DIODE GEN PURP 600V 16A DO220AA

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 16A DO220AA

Technical Specifications

Parameters and characteristics for this part

Specification	S16JR

Current - Average Rectified (Io)	16 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AA, Stud, DO-4
Speed [Min]	200 mA, 500 ns
Technology	Reverse Polarity, Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed [Min]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
GeneSiC Semiconductor S16JR	1.1 V	Reverse Polarity Standard	10 µA	DO-203AA DO-4 Stud	175 ░C	-65 C	200 mA 500 ns	Chassis Stud Mount	600 V	16 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 16A Chassis, Stud Mount

Technical documentation and resources