BUK7M21-40EX

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MOSFET N-CH 40V 33A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 40V 33A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7M21-40EX

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	593 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	44 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	21 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Supplier Device Package	FET Type
Freescale Semiconductor - NXP BUK7M21-40EX	44 W	10 V	-55 °C	175 ░C	Automotive	21 mOhm	40 V	10.7 nC	Surface Mount	20 V	33 A	MOSFET (Metal Oxide)	593 pF	AEC-Q101	LFPAK33	N-Channel

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General part information

N-Channel 40 V 33A (Tc) 44W (Tc) Surface Mount LFPAK33

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