Discrete Semiconductor Products

FLD470

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MOSFET 40V/70A/0.005

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Discrete Semiconductor Products

Active

MOSFET 40V/70A/0.005

Technical Specifications

Parameters and characteristics for this part

Specification	FLD470

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	5100 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	35 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Operating Temperature	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Qualification	Grade	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type
Sanken Electric USA Inc. FLD470	35 W	Through Hole	20 V	150 °C	TO-220-3 Full Pack	40 V	10.5 mOhm	TO-220	5100 pF	70 A	AEC-Q101	Automotive	10 V	MOSFET (Metal Oxide)	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 70A (Ta) 35W (Tc) Through Hole TO-220

Technical documentation and resources