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TO-220-3
Discrete Semiconductor Products

IPP60R280P7XKSA1

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INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 280 MOHM; PRICE/PERFORMANCE

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TO-220-3
Discrete Semiconductor Products

IPP60R280P7XKSA1

Active
INFINEON

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 280 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP60R280P7XKSA1
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]18 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)53 W
Rds On (Max) @ Id, Vgs280 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 500$ 2.43
Tube 1$ 2.60
10$ 1.68
100$ 1.15
500$ 0.93
1000$ 0.85
2000$ 0.79
5000$ 0.78
NewarkEach 1$ 2.81
10$ 1.66
100$ 1.53
500$ 1.30
1000$ 1.17
2500$ 1.16
5000$ 1.16

Description

General part information

IPP60R280 Series

The600V CoolMOS™ P7is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources