Discrete Semiconductor Products

SIE844DF-T1-GE3

Obsolete

MOSFET N-CH 30V 44.5A 10POLARPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 44.5A 10POLARPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIE844DF-T1-GE3

Current - Continuous Drain (Id) (Tc)	44.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	44 nC, 44 nC
Input Capacitance (Ciss) (Max)	2150 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	10-PolarPAK® (U)
Package Name	10-PolarPAK® (U)
Power Dissipation (Max)	25 W, 5.2 W
Rds On (Max)	7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	FET Type	Gate Charge (Max)	Mounting Type	Package / Case	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
Vishay Dale SIE844DF-T1-GE3	2150 pF	3 V	N-Channel	44 nC 44 nC	Surface Mount	10-PolarPAK® (U)	20 V	-55 °C	150 °C	10-PolarPAK® (U)	MOSFET (Metal Oxide)	10 V	4.5 V	44.5 A	7 mOhm	30 V	5.2 W 25 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 44.5A (Tc) 5.2W (Ta), 25W (Tc) Surface Mount 10-PolarPAK® (U)

Technical documentation and resources

No documents available