Discrete Semiconductor Products

2SK3811(0)-ZP-E1-AZ

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NCH SINGLE POWER MOSFET 40V 110A 1.8MOHM MP-25ZP/TO-263

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Discrete Semiconductor Products

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NCH SINGLE POWER MOSFET 40V 110A 1.8MOHM MP-25ZP/TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3811(0)-ZP-E1-AZ

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	260 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	17700 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	213 W, 1.5 W
Rds On (Max) @ Id, Vgs	1.8 mOhm
Supplier Device Package	TO-263-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Single Power Mosfet 40V 110A 1.8Mohm Mp-25Zp/To-263

Part	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
Renesas Electronics Corporation 2SK3811(0)-ZP-E1-AZ	Surface Mount	40 V	17700 pF	1.5 W 213 W	110 A	MOSFET (Metal Oxide)	20 V	TO-263-3	10 V	N-Channel	150 °C	1.8 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	260 nC
Renesas Electronics Corporation 2SK3811-ZP-E1-AY	Surface Mount	40 V	17700 pF	1.5 W 213 W	110 A	MOSFET (Metal Oxide)	20 V	TO-263	10 V	N-Channel	150 °C	1.8 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	260 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.24

General part information

The 2SK3811-ZP is N-channel MOS Field Effect Transistor designed for high current switching applications.

Technical documentation and resources