Discrete Semiconductor Products

S3D50065G

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DIODE SCHOTTKY SILICON CARBIDE S

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Discrete Semiconductor Products

Active

DIODE SCHOTTKY SILICON CARBIDE S

Technical Specifications

Parameters and characteristics for this part

Specification	S3D50065G

Capacitance @ Vr, F	3120 pF
Current - Average Rectified (Io)	112 A
Current - Reverse Leakage @ Vr	40 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	TO-263-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Supplier Device Package	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Technology	Speed	Current - Average Rectified (Io)	Grade	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Reverse Recovery Time (trr)	Speed
SMC Diode Solutions S3D50065G	650 V	AEC-Q101	TO-263-2	3120 pF	40 µA	SiC (Silicon Carbide) Schottky	200 mA 500 ns	112 A	Automotive	Surface Mount	1.7 V	175 ░C	-55 C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
SMC Diode Solutions S3D50065D1	650 V		TO-247AD	3100 pF	40 µA	SiC (Silicon Carbide) Schottky		112 A		Through Hole	1.7 V	175 ░C	-55 C	TO-247-3	0 ns	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 112A Surface Mount TO-263-2

Technical documentation and resources