Discrete Semiconductor Products

CSICD05-1200 TR13

Obsolete

DIODE SIL CARBIDE 1.2KV 5A DPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE SIL CARBIDE 1.2KV 5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	CSICD05-1200 TR13

Capacitance @ Vr, F	240 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	190 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Package / Case	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)
Central Semiconductor Corp CSICD05-1200 TR13	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	DPAK	1.7 V	190 µA	240 pF	500 mA	1.2 kV	SiC (Silicon Carbide) Schottky	175 ░C	-55 °C	0 ns	5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 1200 V 5A Surface Mount DPAK

Technical documentation and resources

No documents available