Discrete Semiconductor Products

PMN28UNEX

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MOSFET N-CH 20V 5.5A 6TSOP

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Discrete Semiconductor Products

Active

MOSFET N-CH 20V 5.5A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMN28UNEX

Current - Continuous Drain (Id) @ 25°C	5.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	490 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-74, SOT-457
Power Dissipation (Max)	570 mW, 6.25 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Operating Temperature	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP PMN28UNEX	Surface Mount	5.5 A	490 pF	SC-74 SOT-457	32 mOhm	150 °C	N-Channel	10 nC	20 V	1.8 V 4.5 V	6-TSOP	8 V	MOSFET (Metal Oxide)	6.25 W 570 mW	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 5.5A (Ta) 570mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP

Technical documentation and resources