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SOT457
Discrete Semiconductor Products

PMN28UNEX

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Nexperia USA Inc.

20 V, N-CHANNEL TRENCH MOSFET

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SOT457
Discrete Semiconductor Products

PMN28UNEX

Active
Nexperia USA Inc.

20 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMN28UNEX
Current - Continuous Drain (Id) @ 25°C5.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
Input Capacitance (Ciss) (Max) @ Vds490 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-457, SC-74
Power Dissipation (Max)570 mW, 6.25 W
Rds On (Max) @ Id, Vgs32 mOhm
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.15
Tape & Reel (TR) 3000$ 0.12
6000$ 0.11
9000$ 0.11
15000$ 0.10
21000$ 0.10
30000$ 0.09
75000$ 0.09

Description

General part information

PMN28UNE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.