Discrete Semiconductor Products

SUD06N10-225L-GE3

Obsolete

MOSFET N-CH 100V 6.5A TO252AA

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 6.5A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	SUD06N10-225L-GE3

Current - Continuous Drain (Id) (Tc)	6.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	4 nC, 4 nC
Input Capacitance (Ciss) (Max)	240 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252AA
Power Dissipation (Max)	16.7 W, 1.25 W
Rds On (Max)	200 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

Part	Technology	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Vgs (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package Name	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Rds On (Max)
Vishay Dale SUD06N10-225L-GE3	MOSFET (Metal Oxide)	10 V	4.5 V	N-Channel	20 V	3 V	100 V	TO-252AA	Surface Mount	-55 °C	150 °C	6.5 A	4 nC 4 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	240 pF	1.25 W 16.7 W	200 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 6.5A (Tc) 1.25W (Ta), 16.7W (Tc) Surface Mount TO-252AA

Technical documentation and resources