Discrete Semiconductor Products

IRFN214BTA_FP001

Obsolete

MOSFET N-CH 250V 600MA TO92-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 250V 600MA TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFN214BTA_FP001

Current - Continuous Drain (Id) @ 25°C	600 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	275 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	2 Ohm
Supplier Device Package	TO-92-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor IRFN214BTA_FP001	2 Ohm	MOSFET (Metal Oxide)	10.5 nC	250 V	Through Hole	275 pF	10 V	TO-226-3 TO-92-3	TO-92-3	-55 °C	150 °C	30 V	4 V	N-Channel	1.8 W	600 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 600mA (Ta) 1.8W (Ta) Through Hole TO-92-3

Technical documentation and resources