Discrete Semiconductor Products

TK160F10N1L,LXGQ

Active

MOSFET N-CH 100V 160A TO220SM

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 100V 160A TO220SM

Technical Specifications

Parameters and characteristics for this part

Specification	TK160F10N1L,LXGQ

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	122 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	10100 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	375 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	TO-220SM(W)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drain to Source Voltage (Vdss)	Package / Case	Qualification	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage TK160F10N1,LXGQ	375 W	160 A	175 °C	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	Surface Mount	121 nC	Automotive	20 V	8510 pF	MOSFET (Metal Oxide)	N-Channel	10 V	2.4 mOhm	TO-220SM(W)
Toshiba Semiconductor and Storage TK160F10N1L,LXGQ	375 W	160 A	175 °C	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	AEC-Q101	Surface Mount	122 nC	Automotive	20 V	10100 pF	MOSFET (Metal Oxide)	N-Channel	6 V 10 V	2.4 mOhm	TO-220SM(W)	3.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)

Technical documentation and resources