Discrete Semiconductor Products

SIRA26DP-T1-RE3

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MOSFET N-CH 25V 60A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 25V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA26DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Input Capacitance (Ciss) (Max) @ Vds	2247 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max) [Max]	43.1 W
Rds On (Max) @ Id, Vgs [Max]	2.65 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SIRA26DP-T1-RE3	2.5 V	PowerPAK® SO-8	44 nC	25 V	-12 V 16 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	60 A	2.65 mOhm	Surface Mount	4.5 V 10 V	43.1 W	N-Channel	2247 pF	-55 °C	150 °C

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General part information

N-Channel 25 V 60A (Tc) 43.1W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources

No documents available