Discrete Semiconductor Products

BSR31,135

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BSR31 - 60 V, 1 A PNP MEDIUM POWER TRANSISTOR@EN-US SOT-89 3-PIN

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Discrete Semiconductor Products

Active

BSR31 - 60 V, 1 A PNP MEDIUM POWER TRANSISTOR@EN-US SOT-89 3-PIN

Technical Specifications

Parameters and characteristics for this part

Specification	BSR31,135

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	100 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	1.35 W
Qualification	AEC-Q100
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature	Grade	Current - Collector Cutoff (Max) [Max]	Qualification	Transistor Type	Current - Collector (Ic) (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Frequency - Transition
Freescale Semiconductor - NXP BSR31,115	100 hFE	TO-243AA	Surface Mount	60 V	150 °C	Automotive	100 nA	AEC-Q100	PNP	1 A	500 mV	1.35 W	100 MHz
Freescale Semiconductor - NXP BSR31,135	100 hFE	TO-243AA	Surface Mount	60 V	150 °C	Automotive	100 nA	AEC-Q100	PNP	1 A	500 mV	1.35 W	100 MHz

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 60 V 1 A 100MHz 1.35 W Surface Mount SOT-89

Technical documentation and resources