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HVSOF5
Sensors, Transducers

BU52013HFV-TR

Active
Rohm Semiconductor

HALL EFFECT SENSOR, -2.1MT MIN, -3MT MAX, 0.20-1.60V, CMOS, PLASTIC/EPOXY, RECTANGULAR, 6 PIN, SURFACE MOUNT, ROHS COMPLIANT, HVSOF-5

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HVSOF5
Sensors, Transducers

BU52013HFV-TR

Active
Rohm Semiconductor

HALL EFFECT SENSOR, -2.1MT MIN, -3MT MAX, 0.20-1.60V, CMOS, PLASTIC/EPOXY, RECTANGULAR, 6 PIN, SURFACE MOUNT, ROHS COMPLIANT, HVSOF-5

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Technical Specifications

Parameters and characteristics for this part

SpecificationBU52013HFV-TR
Current - Output (Max) [Max]500 µA
Current - Supply (Max) [Max]5.5 µA
FunctionUnipolar Switch
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Output TypePush-Pull
Package / CaseSOT-665
PolarizationNorth Pole
Sensing Range-6 mT, -5 mT
Supplier Device Package5-HVSOF
TechnologyHall Effect
Test Condition25 °C
Voltage - Supply [Max]3.3 V
Voltage - Supply [Min]1.65 V

Pricing

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Description

General part information

BU52013 Series

The unipolar Detection Hall IC detects only either the N or S-pole. The output turns ON (active Low) upon detection. It is most suitable for strictly monopole detection and when lower power consumption is desired.·unipolar detection(N-pole)·Micropower operation (small current using intermittent operation method)·Small outline package HVSOF5·For 1.8V Power supply voltage·High ESD resistance 8kV (HBM)

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