Discrete Semiconductor Products

MUR4100GP-BP

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	MUR4100GP-BP

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	10 çA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.85 V

Part	Mounting Type	Technology	Supplier Device Package	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Micro Commercial Components MUR4100GP-BP	Through Hole	Standard	DO-201AD	50 pF	75 ns	150 °C	-55 °C	DO-201AD Axial	200 mA 500 ns	1.85 V	4 A	1000 V	10 çA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	12000	$ 0.11

General part information

Diode 1000 V 4A Through Hole DO-201AD

Technical documentation and resources