Specification	HN1D02FU,LF

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage @ Vr	500 nA
Diode Configuration	2 Pair Common Cathode
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Package / Case	SOT-363, SC-88, 6-TSSOP
Reverse Recovery Time (trr)	4 ns
Speed	200 mA
Speed	Any Speed
Supplier Device Package	US6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.2 V

HN1D02 Series

Diodes, 80 V/0.1 A Switching diode, SOT-363(US6)

Part	Technology	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Mounting Type	Current - Reverse Leakage @ Vr	Diode Configuration	Package / Case	Speed	Speed	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]
Toshiba Semiconductor and Storage HN1D02F(TE85L,F)	Standard	SM6	100 mA	Surface Mount	500 nA	2 Pair Common Cathode	SC-74 SOT-457	200 mA	Any Speed	1.2 V	4 ns	-55 °C	125 °C	80 V
Toshiba Semiconductor and Storage HN1D02FU(T5L,F,T)	Standard	ES6	100 mA	Surface Mount	500 nA	2 Pair Common Cathode	SOT-563 SOT-666	200 mA	Any Speed	1.2 V	4 ns		125 °C	80 V
Toshiba Semiconductor and Storage HN1D02FU,LF	Standard	US6	100 mA	Surface Mount	500 nA	2 Pair Common Cathode	6-TSSOP SC-88 SOT-363	200 mA	Any Speed	1.2 V	4 ns		125 °C	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes, 80 V/0.1 A Switching diode, SOT-363(US6)

Technical documentation and resources