Discrete Semiconductor Products

SIZ320DT-T1-GE3

LTB

MOSFET 2N-CH 25V 30A/40A 8PWR33

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET 2N-CH 25V 30A/40A 8PWR33

Technical Specifications

Parameters and characteristics for this part

Specification	SIZ320DT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	40 A, 30 A
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Qg) (Max) @ Vgs	11.9 nC
Gate Charge (Qg) (Max) @ Vgs	8.9 nC
Input Capacitance (Ciss) (Max) @ Vds	1370 pF, 660 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max	16.7 W, 31 W
Rds On (Max) @ Id, Vgs	8.3 mOhm, 4.24 mOhm
Supplier Device Package	8-Power33 (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Configuration	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Power - Max
Vishay General Semiconductor - Diodes Division SIZ320DT-T1-GE3	30 A 40 A	8-Power33 (3x3)	8-PowerWDFN	2 N-Channel (Dual)	11.9 nC	8.9 nC	MOSFET (Metal Oxide)	Surface Mount	2.4 V	25 V	660 pF 1370 pF	-55 °C	150 °C	4.24 mOhm 8.3 mOhm	16.7 W 31 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 25V 30A (Tc), 40A (Tc) 16.7W, 31W Surface Mount 8-Power33 (3x3)

Technical documentation and resources