Discrete Semiconductor Products

EGP30F-TP

Obsolete

DIODE STANDARD 300V 3A DO201AE

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE STANDARD 300V 3A DO201AE

Technical Specifications

Parameters and characteristics for this part

Specification	EGP30F-TP

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AE, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AE
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Speed	Reverse Recovery Time (trr)	Mounting Type	Package / Case	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If
Micro Commercial Components EGP30F-TP	DO-201AE	5 µA	Standard	200 mA 500 ns	50 ns	Through Hole	DO-201AE Axial	3 A	150 °C	-55 °C	300 V	1.25 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 300 V 3A Through Hole DO-201AE

Technical documentation and resources