Discrete Semiconductor Products

EMT1FHAT2R

NRND

BIPOLAR TRANSISTORS - BJT PNP+PNP GENERAL PURPOSE AMPLIFICATION TRANSISTOR

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Discrete Semiconductor Products

NRND

BIPOLAR TRANSISTORS - BJT PNP+PNP GENERAL PURPOSE AMPLIFICATION TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	EMT1FHAT2R

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	140 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Qualification	AEC-Q101
Supplier Device Package	EMT6
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Grade	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Package / Case	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Qualification
Rohm Semiconductor EMT1FHAT2R	2 PNP (Dual)	500 mV	Automotive	100 nA	120	150 °C	SOT-563 SOT-666	Surface Mount	140 MHz	150 mA	50 V	EMT6	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 140MHz 150mW Surface Mount EMT6

Technical documentation and resources