Discrete Semiconductor Products

HER206G-AP

NRND

DIODE GEN PURP 600V 2A DO15

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Discrete Semiconductor Products

NRND

DIODE GEN PURP 600V 2A DO15

Technical Specifications

Parameters and characteristics for this part

Specification	HER206G-AP

Capacitance @ Vr, F	30 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AC, DO-15, Axial
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-15
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Technology	Speed	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type
Micro Commercial Components HER206G-AP	5 µA	Axial DO-15 DO-204AC	150 °C	-55 °C	2 A	30 pF	Standard	200 mA 500 ns	DO-15	75 ns	1.7 V	600 V	Through Hole
Micro Commercial Components HER206G-TP	5 µA	Axial DO-15 DO-204AC	150 °C	-55 °C	2 A	30 pF	Standard	200 mA 500 ns	DO-15	75 ns	1.7 V	600 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 2A Through Hole DO-15

Technical documentation and resources

No documents available