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R2A25110KSP Block Diagram
Integrated Circuits (ICs)

R2A25110KSP#U50

LTB
Renesas Electronics Corporation

IC GATE DRVR HI/LOW SIDE 48SSOP

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R2A25110KSP Block Diagram
Integrated Circuits (ICs)

R2A25110KSP#U50

LTB
Renesas Electronics Corporation

IC GATE DRVR HI/LOW SIDE 48SSOP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationR2A25110KSP#U50
Channel TypeSynchronous
Current - Peak Output (Source, Sink) [custom]10 A
Current - Peak Output (Source, Sink) [custom]10 A
Driven ConfigurationHigh-Side or Low-Side
Gate TypeIGBT
Input TypeNon-Inverting
Logic Voltage - VIL, VIH1.65 V, 3.85 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case48-SSOP (0.240", 6.10mm Width)
Supplier Device Package48-SSOP
Voltage - Supply4.5 V, 12.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 236$ 11.21

Description

General part information

R2A25110KSP Series

The R2A25110KSP is a single channel IGBT gate-drive IC and suitable for high voltage inverter application. The Micro Isolator with the coreless transformer structure is adopted for data transfer with high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side).

This device contains IGBT gate drive circuit, Miller clamp circuit, soft turn-off circuit as well as several types of protection circuits such as IGBT temperature detection. This device also supports driving parallel IGBTs.

Documents

Technical documentation and resources